宽绝对禁带的一维磁性光子晶体结构

提出了一种具有宽绝对禁带的一维磁性光子晶体结构,该结构由相同的折射率和物理厚度以及不同的波阻抗的两种磁性材料交替组合而成.通过传输矩阵法分析可得,相比于非磁性光子晶体,该光子晶体的禁带对入射角和偏振都不敏感,从而具有更宽的绝对禁带.合适地调节两种磁性材料的参数,增加两者波阻抗的差值,该光子晶体的绝对禁带宽度也相应地增加;调节两种磁性材料的物理厚度,其绝对禁带中心也会随之调整;最后,将两个满足上述条件的一维磁性光子晶体组成异质结构,其第一禁带宽度与禁带中心之间的比值可达到1.41以上.     

基于窄带隙聚合物的高性能可见-近红外光伏探测器

聚合物光伏探测器是一种极具应用前景的新型光电探测器件.研究了基于窄带隙聚合物的高性能可见-近红外光伏探测器,结果表明,所制备的光伏探测器在可见至近红外光谱范围内具有宽的光谱响应(380—960 nm)、出色的响应度(840 nm时达到380 mA/W)和归一化探测度;同时,器件在暗态反偏条件下的能级示意图揭示了器件内平均电场较低是较厚光敏层器件具有低噪声电流的主要原因.电容-电压与时间周期性响应曲线研究表明聚合物光伏探测器具有快速的响应能力和良好的周期重复性.     

Complete low-frequency bandgap in a two-dimensional phononic crystal with spindle-shaped inclusions

A two-dimensional phononic crystal(PC) structure possessing a relatively low frequency range of complete bandgap is presented. The structure is composed of periodic spindle-shaped plumbum inclusions in a rubber matrix which forms a square lattice. The dispersion relation, transmission spectrum and displacement field are studied using the finite element method in conjunction with the Bloch theorem. Numerical results show that the present PC structure can achieve a large complete bandgap in a relatively low frequency range compared with two inclusions of different materials, which is useful in low-frequency noise and vibration control and can be designed as a low frequency acoustic filter and waveguides. Moreover,the transmission spectrum and effective mass are evaluated to validate the obtained band structure. It is interesting to see that within the band gap the effective mass becomes negative, resulting in an imaginary wave speed and wave exponential attenuation. Finally, sensitivity analysis of the effect of geometrical parameters of the presented PC structure on the lowest bandgap is performed to investigate the variations of the bandgap width and frequency.     

High‐mobility solution‐processed zinc oxide thin films on silicon nitride

A high effective electron mobility of 33 cm² V^–1 s^–1 was achieved in solution‐processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si₃N₄) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO₂). The solution‐processed ZnO thin films grown on Si₃N₄, prepared by low‐pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO₂. These results show that the nucleation and growth mechanisms of solution‐processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high‐κ HfO₂/ZnO MOSCAPs were about ten times lower in those fabricated on Si₃N₄ substrates. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

     

Enlargement of omnidirectional electronic gap in the graphene superlattice heterostructures with Gaussian profile potential voltages

A valid method is used to extend the omnidirectional electronic gap (OEG) of Gaussian gapped graphene superlattices (GSLs) heterostructure. The heterostructure consists of two superlattices with different width ratios of potentials. Each superlattice comprises a periodic repetition of a unit cell consisting of 21 layers with the potential voltages varying according to a Gaussian function and another layer with a fixed potential voltage. The potential width ratios of constituent Gaussian gapped GSL are established utilizing the lower and upper energy edges of omnidirectional electronic gap depending on the width ratio of potentials. Moreover, it is shown that the width of OEG of the heterostructure is sensitive to lattice constant, which can be applicable to the development of graphene-based electronics.     

Intrinsic anisotropy of the effective acoustic properties in metafluids made of two-dimensional cylinder arrays

Within a unified theoretical framework, we extract the omnidirectional effective acoustic parameters for the metafluid consisting of isotropic fluid cylinders embedded in an isotropic fluid background. Besides the analytical formulas for the effective parameters reported previously, i.e., the bulk modulus and the mass density perpendicular to the cylinders, we also derive a simple expression for the effective mass density parallel to the cylinders. As expected, these two effective mass densities are not identical and constitute an anisotropic density tensor. Such intrinsic anisotropy can be engineered much stronger than the pure in-plane anisotropy induced by either anisotropic lattices or anisotropic scatterers.     

有机太阳能电池用聚合物给体材料的研究进展

有机太阳能电池由于质轻、价廉、柔性,受到人们的广泛关注.开发性能优异的聚合物给体材料,是近期有机太阳能电池研究的主流方向之一.迄今为止,已经成功开发出各种各样具有优秀的给体性质的共轭聚合物.基于这些材料制备的有机太阳能电池器件,已经突破9%的光电转换效率.按照聚合物给体材料的主链结构分类,综述了近年来这方面的研究进展.对一些受到普遍关注的材料,从设计思想、性能剖析到器件制备和性能,做了详细的介绍,以期能够深层次理解材料的化学结构-凝聚态结构-性能间的基本规律,为今后的材料研发提供有价值的参考.     

固-流结构声子晶体中弹性波能带的色散研究

推导出弹性波斜入射固-流结构声子晶体的转移矩阵和色散公式.利用色散公式研究了弹性波在固-流结构声子晶体中的能带特性.结果表明,介质厚度固定时,弹性波中会出现多级禁带,禁带的频率中心随入射角的增加而向高频方向移动,入射角增加到一定值后会分裂出新的禁带,分裂出的禁带频率宽度随级数的增加而增大.入射角固定时,禁带的频率宽度随介质厚度近似成反比变化,分裂出的禁带频率宽度随介质厚度的增加而减小.     

固-液结构圆柱声子晶体中弹性波的模式和带隙

利用一维固-液结构圆柱声子晶体中弹性波横向受限的条件,推导弹性波在一维固-液结构圆柱声子晶体中各个模式满足的关系式,研究各个模式弹性波的特征.并用色散函数计算各模式弹性波的带隙随模式量子数和圆柱半径的变化规律.得出一维固-液结构圆柱声子晶体的带隙由模式量子数和圆柱半径确定.     

聚合结晶化胶体阵列结构的压敏光响应性质

制备了由单分散聚苯乙烯微球构成的结晶化胶体阵列结构, 并制备了结晶化胶体阵列聚丙烯酰胺水凝胶薄膜. 通过微区反射光谱研究了其光子带隙位置随外加压力的变化规律. 实验结果表明, 该薄膜在垂直表面方向存在光子带隙, 并在一定载荷范围内带隙波长随外加压力呈可逆线性变化.